Principal Engineer - HBT Compact Modeling

The role requires a strong background in semiconductor device physics of diodes, BJTs, HBTs, MOSFETs and HEMTs. The candidate should be familiar with the electrical behaviors of said semiconductor devices (DC/low frequency, RF/high frequency, noise, mismatch, etc.), and the types of test structures that are needed to characterize them.

The candidate should be able to

• Apply his/her knowledge of semiconductor device physics in a practical compact model extraction scenario;
• Analyze and explain the trends in the data, distinguish real trends from noise;
• Associate various physical phenomena with the observed trends;
• Submit electrical characterization requests;
• Extract various compact modeling parameters;
• Do QA checks and submit the model for release.

The candidate should also be familiar with

• Simulations in Cadence ADE;
• Perl / Shell / python scripting ;
• Industry standard compact model families and parameter extraction tools/methodologies; and
• Verilog-A programming

Apart from strong technical skills, the candidate should also possess

• Excellent communication skills;
• Be able to work across geographies and time zones.
• Be self driven and self motivated to excel, innovate and solve problems.

This is not a remote work position; the candidate is expected to work out of Bangalore and come to office atleast three times a week.

Required Qualifications

• Education PhD in the domain of semiconductor devices
• Years of Experience 0

Preferred Qualifications: PhD with specialization in HBT devices