Role

Lead the design and optimization of next-generation SiC MOSFETs and GaN power devices for automotive and industrial applications.
Benchmarking of critical design parameters in and across the voltage nodes.
Research and evaluate novel architectures to improve performance and reliability.
Define device architectures to achieve electrical, thermal, reliability, and cost targets.
Support development and calibration of TCAD process and device simulation models using experimental characterization data.
Design reliable edge termination structures for high and ultra-high voltage applications.
Lead prototype evaluation, electrical characterization, and silicon debug activities in collaboration with Failure Analysis and Reliability teams.
Optimize device designs considering process variation, manufacturability, and long-term reliability.
Collaborate with Process Integration, Product Engineering, Reliability, and external foundry teams throughout product development.
Support in IP generations, technical report writing, and research publications.
Provide technical guidance to junior engineers and review technical deliverables.
Clear communication of complex technological ideas to cross functional and leadership teams.

Requirements

MS/PhD in Electrical Engineering, Microelectronics, Semiconductor Physics, or a related discipline.
6–10 years of experience in power semiconductor device design.
Strong expertise in SiC MOSFETs, SiC diodes, GaN HEMTs, or advanced silicon power devices.
Advanced knowledge of semiconductor device physics and wide bandgap materials.
Expert-level experience with TCAD simulation and model calibration.
Experience in device layout development and mask design.
Strong understanding of silicon correlation and electrical characterization.
Knowledge of reliability mechanisms including TDDB, HTRB, HTGB, HTOL, UIS, avalanche, and short-circuit ruggedness.
Experience in JMP, Minitab, or other statistical tools.
Familiarity with JEDEC and AEC-Q101 qualification standards.
Experience collaborating with external foundries are desirable.

Patent contributions or published technical work are desirable

SiC Device Design Engineer