Position Summary

We are seeking a highly motivated Senior Device Engineer to join our GaN Technology Development team and contribute to the research, design, and development of next-generation advanced GaN-based power devices. In this role, you will help develop innovative device architectures and advance existing technology platforms to enable robust, high-performance GaN devices for power conversion applications.

You will work closely with cross-functional engineering teams and foundry partners, applying semiconductor device physics, TCAD simulation, electrical characterization, and data-driven analysis to help develop scalable, manufacturable GaN technologies.

Key Responsibilities

Support the design, development, and optimization of enhancement-mode GaN HEMTs for high-power applications.
Research and evaluate novel device architectures to improve electrical performance, manufacturability, and long-term robustness.
Assist in planning and executing Design of Experiments (DOE) to evaluate new device structures, layouts, and technology options.
Perform TCAD simulations to characterize and predict device behavior.
Support on-wafer electrical characterization to advance technology development.
Analyze wafer- and package-level electrical data to identify performance limitations and support device optimization.
Collaborate with foundry partners to evaluate device and process tradeoffs affecting yield, reliability, and manufacturability.
Document findings, prepare engineering reports, and present results to cross-functional teams.

Qualifications

Required Qualifications

Ph.D. in Electrical Engineering, Physics, Materials Science, or a related field; or M.S. in one of these fields with 4+ years of relevant industry experience.
Strong foundation in semiconductor device physics, power devices, and wide-bandgap semiconductor technologies.
Hands-on experience with TCAD tools (e.g., Synopsys Sentaurus, Silvaco Atlas, or equivalent).
Experience with electrical characterization and data interpretation for semiconductor devices.
Programming experience in Python, MATLAB, or similar languages for engineering analysis and automation.
Strong analytical, problem-solving, and communication skills, both written and verbal.

Preferred Qualifications

Research experience with high-power GaN devices (academic or industry).
Working knowledge of semiconductor reliability mechanisms and their influence on device design.
Exposure to designing or analyzing DOEs for device development.
Familiarity with semiconductor failure analysis techniques.
Publications, patents, conference presentations, or other technical contributions from graduate research.